npn silicon planar medium power high current transistor issue 1 ? april 94 features * 25 volt v ceo * 5 amps continuous current * up to 20 amps peak current * very low saturation voltage *high gain *p tot =1.2 watts absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6v peak pulse current i cm 20 a continuous collector current i c 5a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 60 120 v i c =100 m a collector-emitter breakdown voltag v (br)cer 60 120 v ic=1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo 25 35 v i c =10ma* emitter-base breakdown voltage v (br)ebo 68 v i e =100 m a collector cut-off current i cbo 50 1 na m a v cb =50v v cb =50v, t amb =100c collector cut-off current i cer r 1k w 50 1 na m a v cb =50v v cb =50v, t amb =100c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 25 50 100 180 50 80 200 220 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =100ma* i c =5a, i b =100ma* base-emitter saturation voltage v be(sat) 880 950 mv i c =5a, i b =100ma* e-line to92 compatible ZTX869 3-306 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) 800 900 mv ic=5a, v ce =1v* static forward current transfer ratio h fe 300 300 250 40 450 450 400 100 i c =10ma, v ce =1v i c =1a, v ce =1v* i c =5a, v ce =1v* i c =20a, v ce =1v* transition frequency f t 100 mhz i c =100ma, v ce =10v f=50mhz output capacitance c obo 70 pf v cb =10v, f=1mhz switching times t on t off 60 680 ns ns i c =1a, i b1 =100ma i b2 =100ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX869 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d i ss i pa ti on - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-307
npn silicon planar medium power high current transistor issue 1 ? april 94 features * 25 volt v ceo * 5 amps continuous current * up to 20 amps peak current * very low saturation voltage *high gain *p tot =1.2 watts absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6v peak pulse current i cm 20 a continuous collector current i c 5a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 60 120 v i c =100 m a collector-emitter breakdown voltag v (br)cer 60 120 v ic=1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo 25 35 v i c =10ma* emitter-base breakdown voltage v (br)ebo 68 v i e =100 m a collector cut-off current i cbo 50 1 na m a v cb =50v v cb =50v, t amb =100c collector cut-off current i cer r 1k w 50 1 na m a v cb =50v v cb =50v, t amb =100c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 25 50 100 180 50 80 200 220 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =100ma* i c =5a, i b =100ma* base-emitter saturation voltage v be(sat) 880 950 mv i c =5a, i b =100ma* e-line to92 compatible ZTX869 3-306 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) 800 900 mv ic=5a, v ce =1v* static forward current transfer ratio h fe 300 300 250 40 450 450 400 100 i c =10ma, v ce =1v i c =1a, v ce =1v* i c =5a, v ce =1v* i c =20a, v ce =1v* transition frequency f t 100 mhz i c =100ma, v ce =10v f=50mhz output capacitance c obo 70 pf v cb =10v, f=1mhz switching times t on t off 60 680 ns ns i c =1a, i b1 =100ma i b2 =100ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX869 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d i ss i pa ti on - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-307
ZTX869 0.01 0.1 1 10 1.0 0 1.5 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v o lts ) i c - collector current (amps) v be(sat) v i c 0.01 0.1 1 10 1.0 0.5 2.0 1.5 i c - collector current (amps) v be(on) v i c v be - (v olts) v b e (sat) - ( v olts) 0.5 0.01 0.1 1 10 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 i c - collector current (amps) h fe v i c h fe - n o r mal i se d gain 675 450 225 h fe - typical gain 100 v ce =1v 100 0.001 0.01 0.1 1 10 1.0 0.5 2.0 1.5 100 0.001 v ce =1v i c /i b =10 i c /i b =100 v ce =5v i c /i b =100 i c /i b =10 100 i c - co l le c to r cur r e nt ( am ps) v ce - collector voltage (volts) safe operating area 0.1 100 110 0.1 1 10 100 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 3-308
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